inchange semiconductor isc product specification isc silicon pnp power transistor 2sb1018a description low collector saturation voltage- : v ce(sat) = -0.5v(max)@i c = -4a high current capability- i c = -7a complement to type 2sd1411a applications high current switching applications. power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -100 v v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -5 v i c collector current-continuous -7 a i b b base current-continuous -1 a collector power dissipation @ t a =25 2 p c collector power dissipation @ t c =25 30 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2sb1018a electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -50ma; i b = 0 -80 v v ce (sat) collector-emitter saturation voltage i c = -4a; i b = -0.4a b -0.5 v v be (sat) base-emitter saturation voltage i c = -4a; i b = -0.4a b -1.4 v i cbo collector cutoff current v cb = -100v; i e = 0 -5 a i ebo emitter cutoff current v eb = -5v; i c = 0 -5 a h fe-1 dc current gain i c = -1a; v ce = -1v 70 240 h fe-2 dc current gain i c = -4a; v ce = -1v 30 c ob output capacitance i e = 0; v cb = -10v; f= 1mhz 250 pf f t current-gain?bandwidth product i c = -1a; v ce = -4v 10 mhz switching times t on turn-on time 0.4 s t stg storage time 2.5 s t f fall time i c = -3.0a ,i b1 = -i b2 = -0.3a, v cc = -30v; r l = 10 0.5 s ? h fe-1 classifications o y 70-140 120-240 isc website www.iscsemi.cn 2
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